High-pressure research on optoelectronic materials: Insights from <i>in situ</i> characterization methods

Guo Songhao; Zhan Yiqiang; Lü Xujie

doi:10.1063/5.0258375

Volume 10 Issue 3

May 2025

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Guo Songhao, Zhan Yiqiang, Lü Xujie. High-pressure research on optoelectronic materials: Insights from in situ characterization methods[J]. Matter and Radiation at Extremes, 2025, 10(3): 033802. doi: 10.1063/5.0258375

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Guo Songhao, Zhan Yiqiang, Lü Xujie. High-pressure research on optoelectronic materials: Insights from in situ characterization methods[J]. Matter and Radiation at Extremes, 2025, 10(3): 033802. doi: 10.1063/5.0258375

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High-pressure research on optoelectronic materials: Insights from in situ characterization methods

doi: 10.1063/5.0258375

Guo Songhao^{,
,},
Zhan Yiqiang^1
,,
Lü Xujie^{2
,
,
,}

1.
Center of Micro–Nano Systems, School of Information Science and Technology, Fudan University, Shanghai 200433, China
2.
Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, China

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Corresponding author: a)Authors to whom correspondence should be addressed: sh_guo@fudan.edu.cn and xujie.lu@hpstar.ac.cn
Received Date: 2025-01-16
Accepted Date: 2025-04-11

Available Online: 2025-11-28

Publish Date: 2025-05-01

Abstract

Abstract

High-pressure research has emerged as a pivotal approach for advancing our understanding and development of optoelectronic materials, which are vital for a wide range of applications, including photovoltaics, light-emitting devices, and photodetectors. This review highlights various in situ characterization methods employed in high-pressure research to investigate the optical, electronic, and structural properties of optoelectronic materials. We explore the advances that have been made in techniques such as X-ray diffraction, absorption spectroscopy, nonlinear optics, photoluminescence spectroscopy, Raman spectroscopy, and photoresponse measurement, emphasizing how these methods have enhanced the elucidation of structural transitions, bandgap modulation, performance optimization, and carrier dynamics engineering. These insights underscore the pivotal role of high-pressure techniques in optimizing and tailoring optoelectronic materials for future applications.

The authors have no conflicts to disclose.
Conflict of Interest
Songhao Guo: Writing – original draft (equal); Writing – review & editing (equal). Yiqiang Zhan: Writing – review & editing (equal). Xujie Lü: Supervision (equal).
Author Contributions
Data sharing is not applicable to this article as no new data were created or analyzed in this study.

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References(66)

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