The near-room-temperature upsurge of electrical resistivity in Lu-H-N is not superconductivity, but a metal-to-poor-conductor transition

Peng Di; Zeng Qiaoshi; Lan Fujun; Xing Zhenfang; Ding Yang; Mao Ho-kwang

doi:10.1063/5.0166430

Volume 8 Issue 5

Sep. 2023

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Article Navigation > Matter and Radiation at Extremes > 2023 > 8(5): 058401

Peng Di, Zeng Qiaoshi, Lan Fujun, Xing Zhenfang, Ding Yang, Mao Ho-kwang. The near-room-temperature upsurge of electrical resistivity in Lu-H-N is not superconductivity, but a metal-to-poor-conductor transition[J]. Matter and Radiation at Extremes, 2023, 8(5): 058401. doi: 10.1063/5.0166430

Citation:

Peng Di, Zeng Qiaoshi, Lan Fujun, Xing Zhenfang, Ding Yang, Mao Ho-kwang. The near-room-temperature upsurge of electrical resistivity in Lu-H-N is not superconductivity, but a metal-to-poor-conductor transition[J]. Matter and Radiation at Extremes, 2023, 8(5): 058401. doi: 10.1063/5.0166430

Citation:

Peng Di, Zeng Qiaoshi, Lan Fujun, Xing Zhenfang, Ding Yang, Mao Ho-kwang. The near-room-temperature upsurge of electrical resistivity in Lu-H-N is not superconductivity, but a metal-to-poor-conductor transition[J]. Matter and Radiation at Extremes, 2023, 8(5): 058401. doi: 10.1063/5.0166430

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The near-room-temperature upsurge of electrical resistivity in Lu-H-N is not superconductivity, but a metal-to-poor-conductor transition

doi: 10.1063/5.0166430

Peng Di^{1, 2, 3
,},
Zeng Qiaoshi^{1, 4
,
,
,},
Lan Fujun¹,
Xing Zhenfang^{1, 5},
Ding Yang¹,
Mao Ho-kwang^{1, 4
,
,}

1.
Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
2.
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
3.
University of Science and Technology of China, Hefei 230026, China
4.
Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments (MFree), Shanghai Advanced Research in Physical Sciences (SHARPS), Shanghai 201203, China
5.
State Key Laboratory of Superhard Materials, Institute of Physics, Jilin University, Changchun 130012, China

More Information

Corresponding author: a)Authors to whom correspondence should be addressed: zengqs@hpstar.ac.cn and maohk@hpstar.ac.cn
Received Date: 2023-07-05
Accepted Date: 2023-07-09

Available Online: 2023-09-01

Publish Date: 2023-09-01

Abstract

Abstract

The recent report of superconductivity in nitrogen-doped lutetium hydride (Lu-H-N) at 294 K and 1 GPa brought hope for long-sought-after ambient-condition superconductors. However, the failure of scientists worldwide to independently reproduce these results has cast intense skepticism on this exciting claim. In this work, using a reliable experimental protocol, we synthesized Lu-H-N while minimizing extrinsic influences and reproduced the sudden change in resistance near room temperature. With quantitative comparison of the temperature-dependent resistance between Lu-H-N and the pure lutetium before reaction, we were able to clarify that the drastic resistance change is most likely caused by a metal-to-poor-conductor transition rather than by superconductivity. Herein, we also briefly discuss other issues recently raised in relation to the Lu-H-N system.

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References(13)

References

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