Dielectronic recombination in non-LTE plasmas

Rosmej F. B.; Astapenko V. A.; Lisitsa V. S.; Vainshtein L. A.

doi:10.1063/5.0014158

Volume 5 Issue 6

Nov. 2020

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Rosmej F. B., Astapenko V. A., Lisitsa V. S., Vainshtein L. A.. Dielectronic recombination in non-LTE plasmas[J]. Matter and Radiation at Extremes, 2020, 5(6): 064201. doi: 10.1063/5.0014158

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Rosmej F. B., Astapenko V. A., Lisitsa V. S., Vainshtein L. A.. Dielectronic recombination in non-LTE plasmas[J]. Matter and Radiation at Extremes, 2020, 5(6): 064201. doi: 10.1063/5.0014158

Rosmej F. B., Astapenko V. A., Lisitsa V. S., Vainshtein L. A.. Dielectronic recombination in non-LTE plasmas[J]. Matter and Radiation at Extremes, 2020, 5(6): 064201. doi: 10.1063/5.0014158

Citation:

Rosmej F. B., Astapenko V. A., Lisitsa V. S., Vainshtein L. A.. Dielectronic recombination in non-LTE plasmas[J]. Matter and Radiation at Extremes, 2020, 5(6): 064201. doi: 10.1063/5.0014158

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Dielectronic recombination in non-LTE plasmas

doi: 10.1063/5.0014158

Rosmej F. B.^{1, 2, 3, 4
,
,
,},
Astapenko V. A.^3
,,
Lisitsa V. S.^{3, 4, 5},
Vainshtein L. A.⁶

1.
Sorbonne University, Faculty of Science and Engineering, UMR 7605, Case 128, 4 Place Jussieu, F-75252 Paris Cedex 05, France
2.
LULI, Ecole Polytechnique, CNRS-CEA, Physique Atomique dans les Plasmas Denses (PAPD), Route de Saclay, F-91128 Palaiseau Cedex, France
3.
Moscow Institute of Physics and Technology MIPT (National Research University), Dolgoprudnyi 141700, Russia
4.
National Research Nuclear University—MEPhI, Department of Plasma Physics, Moscow 115409, Russia
5.
National Research Center “Kurchatov Institute”, Moscow, Russia
6.
P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991, Russia

More Information

Corresponding author: a)Author to whom correspondence should be addressed: frank.rosmej@sorbonne-universite.fr
Received Date: 2020-05-18
Accepted Date: 2020-09-02

Available Online: 2020-11-01

Publish Date: 2020-11-15

Abstract

Abstract

Novel phenomena and methods related to dielectronic capture and dielectronic recombination are studied for non-local thermodynamic equilibrium (LTE) plasmas and for applications to non-LTE ionization balance. It is demonstrated that multichannel autoionization and radiative decay strongly suppress higher-order contributions to the total dielectronic recombination rates, which are overestimated by standard approaches by orders of magnitude. Excited-state coupling of dielectronic capture is shown to be much more important than ground-state contributions, and electron collisional excitation is also identified as a mechanism driving effective dielectronic recombination. A theoretical description of the effect of angular-momentum-changing collisions on dielectronic recombination is developed from an atomic kinetic point of view and is visualized with a simple analytical model. The perturbation of the autoionizing states due to electric fields is discussed with respect to ionization potential depression and perturbation of symmetry properties of autoionization matrix elements. The first steps in the development of statistical methods are presented and are realized in the framework of a local plasma frequency approach. Finally, the impact of collisional–radiative processes and atomic population kinetics on dielectronic recombination is critically discussed, and simple analytical formulas are presented.

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References(71)

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