Defects of laser-irradiated KDP crystals with different fluences studied by photoluminescence spectroscopy

Li Xiangcao; Liu Bao’an; Yan Chunyan; Ren Jie; Liu Chang; Ju Xin

doi:10.1063/1.5143289

Volume 5 Issue 3

May 2020

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Li Xiangcao, Liu Bao’an, Yan Chunyan, Ren Jie, Liu Chang, Ju Xin. Defects of laser-irradiated KDP crystals with different fluences studied by photoluminescence spectroscopy[J]. Matter and Radiation at Extremes, 2020, 5(3): 035402. doi: 10.1063/1.5143289

Citation:

Li Xiangcao, Liu Bao’an, Yan Chunyan, Ren Jie, Liu Chang, Ju Xin. Defects of laser-irradiated KDP crystals with different fluences studied by photoluminescence spectroscopy[J]. Matter and Radiation at Extremes, 2020, 5(3): 035402. doi: 10.1063/1.5143289

Citation:

Li Xiangcao, Liu Bao’an, Yan Chunyan, Ren Jie, Liu Chang, Ju Xin. Defects of laser-irradiated KDP crystals with different fluences studied by photoluminescence spectroscopy[J]. Matter and Radiation at Extremes, 2020, 5(3): 035402. doi: 10.1063/1.5143289

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Defects of laser-irradiated KDP crystals with different fluences studied by photoluminescence spectroscopy

doi: 10.1063/1.5143289

Department of Physics, University of Science and Technology Beijing, Beijing 100083, China

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Corresponding author: a)Author to whom correspondence should be addressed: jux@ustb.edu.cn
Received Date: 2019-12-21
Accepted Date: 2020-04-02

Available Online: 2020-05-01

Publish Date: 2020-05-15

Abstract

Abstract

Photoluminescence (PL) bands from potassium dihydrogen phosphate (KDP) crystals are studied by time-resolved PL spectroscopy. KDP crystals irradiated at a laser fluence of 11.5 J/cm² are found to have the highest probability of phosphorus–oxygen hole center defects and the lowest probability of phosphorus-oxygen electric center defects, in contrast to the probabilities of these defects for KDP crystals irradiated at 9.0 J/cm². The probabilities of these two defects occurring in retired components are found to be intermediate between those for crystals irradiated at the two different fluences. The two types of defects may result from two different mechanisms and may interconvert under certain conditions. Thus, there are differences between the defects in KDP crystals irradiated at a high laser fluence and those in retired components.

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References(27)

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